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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistor
2SB885
DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Low collector saturation voltage Complement to type 2SD1195 APPLICATIONS For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION
Emitter

PARAMETER
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO VCEO VEBO IC ICM
HAN INC
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse
SEM GE
Open emitter Open base Open collector
OND IC
TOR UC
VALUE -110 -100 -6 -5 -8 UNIT V V V A A
CONDITIONS
TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature
35 W 1.75 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistor
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SB885
SYMBOL
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA, RBE=
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA, IE=0
-110
V
VCEsat
Collector-emitter saturation voltage
IC=-2.5A ,IB=-5mA
-1.5
V
VBE sat
Base-emitter saturation voltage
IC=-2.5A ,IB=-5mA
-2.0
V
ICBO
Collector cut-off current
VCB=-80V, IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-3.0
mA
hFE
DC current gain
fT
Switching times
Transition frequency
ANG CH
IC=-2.5A ; VCE=-3V
1500
VCE=-5V, IC=-2.5A
ton
Turn-on time
tstg
Storage time
IN
EMIC ES
IC=-2A ; VCC=-50V IB1=-IB2=-4mA;RL=25|
DUC ON
20 0.7 1.3 1.5
TOR
MHz
|I
s
|I
s
tf
Turn-off time
|I
s
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistor
PACKAGE OUTLINE
2SB885
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions
3


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